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Authors whose works are in public domain in at least one jurisdiction

List of works by Junichi Isoya

1-20 of 20 results

Ultralong spin coherence time in isotopically engineered diamond

Sensing single remote nuclear spins

scientific article published on 2 September 2012

Nanoscale nuclear magnetic resonance with chemical resolution.

scientific article published in June 2017

Local and bulk (13)C hyperpolarization in nitrogen-vacancy-centred diamonds at variable fields and orientations

scientific article published on 25 September 2015

Nonvolatile nuclear spin memory enables sensor-unlimited nanoscale spectroscopy of small spin clusters

scientific article published on 10 October 2017

High-resolution spectroscopy of single nuclear spins via sequential weak measurements

scientific article published in Nature Communications

Strongly coupled diamond spin qubits by molecular nitrogen implantation

scholarly article in Physical Review B, vol. 88 no. 20, November 2013

Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond

scientific article published on 01 February 2019

Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation.

scientific article published on 13 June 2019

EPR Identification of Defects and Impurities in SiC: To be Decisive

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation

The Carbon Vacancy Related EI4 Defect in 4H-SiC

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation (Phys. Status Solidi A 11∕2015)

Quantum nonlinear spectroscopy of single nuclear spins

scientific article published in 2022

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

scientific article published on 25 July 2013

Shallow P Donors in 3C-, 4H- and 6H-SiC

scholarly article published October 2006

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

scientific article published on 05 December 2019